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SKW20N60
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
* 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability * Very soft, fast recovery anti-parallel EmCon diode
C
G
E
Type SKW20N60 Maximum Ratings Parameter
VCE 600V
IC 20A
VCE(sat) 2.4V
Tj 150C
Package TO-247AC
Ordering Code Q67040-S4242
Symbol VCE IC
Value 600 40 20
Unit V A
Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature
1)
ICpul s IF
80 80
40 20 IFpul s VGE tSC Ptot Tj , Tstg 80 20 10 179 -55...+150 V s W C
VGE = 15V, VCC 600V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00
SKW20N60
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 20 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 2 0 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 70 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
Symbol
Conditions
Max. Value
Unit
RthJC RthJCD RthJA TO-247AC
0.7 1.3 40
K/W
Symbol
Conditions
Value min. 600 1.7 1.2 3 Typ. 2 2.4 1.4 1.25 4 14 1100 107 63 100 13 200 max. 2.4 2.9 1.8 1.65 5
Unit
V
A 40 2500 100 1320 128 76 130 nC nH A nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 20 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =2 0 A V G E = 15 V T O - 24 7A C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Mar-00
SKW20N60
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 C , V R = 2 00 V , I F = 2 0 A, d i F / d t =2 0 0 A/ s 300 30 270 490 5.5 180 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 2 0 A, V G E = 0/ 15 V , R G = 16 , Energy losses include "tail" and diode reverse recovery. 36 30 225 54 0.44 0.33 0.77 46 36 270 65 0.53 0.43 0.96 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =1 5 0 C V R = 2 00 V , I F = 2 0 A, d i F / d t =2 0 0 A/ s 410 45 365 1270 8.5 200 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 20 A , V G E = 0/ 15 V , R G = 16 Energy losses include "tail" and diode reverse recovery. 36 30 250 63 0.67 0.49 1.12 46 36 300 76 0.81 0.64 1.45 mJ ns Symbol Conditions Value min. typ. max. Unit
3
Mar-00
SKW20N60
110A 100A 90A
100A
Ic
tp=4s 15s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A 70A 60A 50A 40A 30A 20A 10A 0A 10Hz TC=110C TC=80C
10A 50s
200s 1A 1ms
Ic
0.1A 1V 10V 100V
DC
100Hz
1kHz
10kHz
100kHz
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 16)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
200W 180W 160W
50A
40A
120W 100W 80W 60W 40W 20W 0W 25C
IC, COLLECTOR CURRENT
50C 75C 100C 125C
Ptot, POWER DISSIPATION
140W
30A
20A
10A
0A 25C
50C
75C
100C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
4
Mar-00
SKW20N60
60A 60A
50A
50A VGE=20V 15V 13V 11V 9V 7V 5V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
40A
40A
VGE=20V 15V 13V 11V 9V 7V 5V
30A
30A
20A
20A
10A
10A
0A 0V
1V
2V
3V
4V
5V
0A 0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
60A 50A 40A 30A 20A 10A 0A 0V
Tj=+25C -55C +150C
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
70A
4.0V
3.5V
IC = 40A
3.0V
IC, COLLECTOR CURRENT
2.5V
IC = 20A
2.0V
1.5V
2V
4V
6V
8V
10V
1.0V
-50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Mar-00
SKW20N60
td(off)
td(off)
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
100ns
tf
td(on) tr
td(on) tr
10ns 10A 20A 30A 40A
10ns 0
10
20
30
40
50
60
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 16)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 20A)
5.5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V typ. max.
td(off)
t, SWITCHING TIMES
100ns
tf tr td(on)
min.
10ns 0C
50C
100C
150C
-50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 20A, RG = 1 6)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA)
6
Mar-00
SKW20N60
3.0mJ
*) Eon and Ets include losses due to diode recovery.
3.0mJ
Ets*
*) Eon and Ets include losses due to diode recovery.
2.5mJ
2.5mJ
E, SWITCHING ENERGY LOSSES
2.0mJ Eon* 1.5mJ Eoff
E, SWITCHING ENERGY LOSSES
2.0mJ Ets* 1.5mJ
1.0mJ
1.0mJ
Eon* Eoff
0.5mJ
0.5mJ
0.0mJ 0A
10A
20A
30A
40A
50A
0.0mJ 0
10
20
30
40
50
60
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 16)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 20A)
1.6mJ
ZthJC, TRANSIENT THERMAL IMPEDANCE
1.4mJ
*) Eon and Ets include losses due to diode recovery.
10 K/W D=0.5 0.2 10 K/W 0.1 0.05 0.02 10 K/W 0.01
-2 -1
0
E, SWITCHING ENERGY LOSSES
1.2mJ 1.0mJ 0.8mJ
Ets*
Eon* 0.6mJ Eoff 0.4mJ 0.2mJ 0.0mJ 0C
R,(1/W) 0.1882 0.3214 0.1512 0.0392
R1
, (s)= 0.1137 2.24*10-2 7.86*10-4 9.41*10-5
R2
10 K/W single pulse
-3
C 1= 1/R 1
C 2= 2/R 2
50C
100C
150C
10 K/W 1s
-4
10s
100s
1ms
10ms 100ms
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 20A, RG = 1 6)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Mar-00
SKW20N60
25V
Ciss
20V
1nF
VGE, GATE-EMITTER VOLTAGE
15V 120V 480V
C, CAPACITANCE
10V
100pF
Coss
5V
Crss
0V 0nC
25nC
50nC
75nC 100nC 125nC
10pF 0V
10V
20V
30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 20A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
350A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
300A 250A 200A 150A 100A 50A 0A 10V
tsc, SHORT CIRCUIT WITHSTAND TIME
20 s
15 s
10 s
5 s
0 s 10V
11V
12V
13V
14V
15V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C)
8
Mar-00
SKW20N60
600ns
2500nC
500ns
Qrr, REVERSE RECOVERY CHARGE
2000nC
trr, REVERSE RECOVERY TIME
IF = 40A
1500nC
400ns
IF = 40A
IF = 20A
300ns
IF = 20A IF = 10A
1000nC
200ns
IF = 10A
500nC
100ns
0ns 100A/s
300A/s
500A/s
700A/s
900A/s
0nC 100A/s
300A/s
500A/s
700A/s
900A/s
d i F / d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 200V, Tj = 125C)
d i F / d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 200V, Tj = 125C)
24A
1000A/s
20A
d i r r /d t, DIODE PEAK RATE OF FALL
16A
IF = 40A
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
800A/s
600A/s
12A
IF = 20A IF = 10A
400A/s
8A
4A
200A/s
0A 100A/s
300A/s
500A/s
700A/s
900A/s
0A/s 100A/s
300A/s
500A/s
700A/s
900A/s
d i F / d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125C)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125C)
9
Mar-00
SKW20N60
40A 35A
2.0V
I F = 40A
30A 25A 150C 20A 100C 15A 10A 5A 0A 0.0V -55C 25C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.5V
I F = 20A
0.5V
1.0V
1.5V
2.0V
1.0V
-40C
0C
40C
80C
120C
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
ZthJCD, TRANSIENT THERMAL IMPEDANCE
10 K/W D=0.5 0.2 0.1 10 K/W 0.05 0.02
-1
0
10 K/W
-2
0.01
R,(1/W) 0.358 0.367 0.329 0.216 0.024
R1
, (s)= 9.02*10-2 9.42*10-3 9.93*10-4 1.19*10-4 1.92*10-5
R2
single pulse
C1= 1/R1 C 2 = 2 /R 2
10 K/W 1s
-3
10s
100s
1ms
10ms 100ms
1s
tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T)
10
Mar-00
SKW20N60
TO-247AC
symbol dimensions
[mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 min
[inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252
A B C D E F G H K L M N
P
4.78 2.29 1.78 1.09 1.73 2.67
0.1882 0.0902 0.0701 0.0429 0.0681 0.1051
0.76 max 20.80 15.65 5.21 19.81 3.560 21.16 16.15 5.72 20.68 4.930
0.0299 max 0.8189 0.6161 0.2051 0.7799 0.1402 0.8331 0.6358 0.2252 0.8142 0.1941
3.61 6.12 6.22
0.1421 0.2409 0.2449
Q
11
Mar-00
SKW20N60
i,v diF /dt tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
2
r2
r1
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
12
Mar-00
SKW20N60
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
13
Mar-00
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